NCV20034DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20034DR2G Power MOSFET:

NCV20034DR2G

The NCV20034DR2G delivers industry-leading RDS(on) density in ON Semiconductor's thermally optimized PowerSSO-8 package. As a 34A N-channel MOSFET optimized for power-dense applications with stringent cooling needs, it maximizes heat dissipation.

Key Features:

• 60V voltage rating
• 34A continuous drain current capability
• 19mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO-8 package
• Low 4°C/W junction-to-case thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for high frequency switching
• Ideal for dense motor control, industrial automation and solar microinverters

PowerSSO-8's copper clips provide superb thermal transfer from ultra-compact footprint.

Enables industry-leading current density optimization within most restrictive board areas.

Reliable operation under demanding thermal environments improves power supply efficiency.

Optimized switching characteristics enable more capability despite tight thermal constraints.

Simply offers the highest power density solution where board space and cooling are limited.

On Semiconductor's optimization for applications with extreme power, area and thermal limitations.

The perfect fit to maximize current handling within most challenging space and heat dissipation needs.

NCV20034DR2G onsemi Images