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NCD57201DR2G onsemi

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NCD57201DR2G onsemi

Description : NCD57201DR2G onsemi SOIC-8

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Here is the English description of the NCD57201DR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 2A
  • Fast Switching Speeds
  • TO-220 FullPak 2L Package

The NCD57201DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 2A
  • Low RDS(on) minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

  • DC/DC converters below 2A loads
  • Motor drivers and controls under 2A current
  • General purpose switching under 2A load

Benefits include the ability to switch up to 2A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 2A where heat dissipation is important.

In summary, the NCD57201DR2G offers 2A current handling capability with minimal resistance and losses, focusing on thermal management.


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