NCV5703ADR2G onsemi

Here is the English description of the NCV5703ADR2G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 5.7A
• On-Resistance: 20mΩ (typ)
• Fast Switching Speed
• TO-220AB Full Pack Package

The NCV5703ADR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 5.7A
• Ultra-low RDS(on) of 20mΩ minimizes conduction losses
• Fast switching enables high efficiency operation
• TO-220AB package provides excellent thermal dissipation

Common Applications:

• Point-of-load DC/DC converters under 5.7A loads
• Motor driver circuits requiring up to 5.7A
• General purpose switching below 5.7A

Benefits include reliable 5.7A switching capability with industry-leading low resistance. Proven TO-220AB package ensures optimal thermal management.

Well suited for applications requiring precise control of currents up to 5.7A where conduction losses must be minimized.

In summary, the NCV5703ADR2G delivers high current switching with ultra-low losses and is packaged for rugged use and high power dissipation.

NCV5703ADR2G onsemi Images