NCV5703CDR2G onsemi

Here is the English description of the NCV5703CDR2G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 5.7A
• On-Resistance: 20mΩ (typ)
• Package: TO-220FB Full Body

The NCV5703CDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 5.7A
• Ultra-low RDS(on) of 20mΩ minimizes conduction losses
• TO-220FB package provides rugged mounting and effective heat dissipation

Common Applications:

• Point-of-load DC/DC converters under 5.7A loads
• Motor driver circuits requiring up to 5.7A
• Where durability is required

Benefits include reliable 5.7A switching capability with industry-leading low resistance. Sturdy TO-220FB package ensures robust construction and thermal management.

Well-suited for applications requiring precise control of currents up to 5.7A where ruggedness and heat dissipation are priorities.

In summary, the NCV5703CDR2G enables 5.7A switching with a focus on durability and thermal performance in demanding environments.

NCV5703CDR2G onsemi Images