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SI3900DV-T1-GE3

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SI3900DV-T1-GE3

Description : SI3900DV-T1-GE3 TSOP-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSOP-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.4 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.15 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Product Type:	MOSFET
	3000
Subcategory:	MOSFETs
Part # Aliases:	SI3900DV-GE3
Unit Weight:	0.000705 oz

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