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SQJ444EP-T1-GE3

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SQJ444EP-T1-GE3

Description : SQJ444EP-T1-GE3 PowerPAK-SO-8-4

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK-SO-8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	TrenchFET
Series:	SQ
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	21 ns
Forward Transconductance - Min:	80 S
Height:	1.04 mm
Length:	6.15 mm
Product Type:	MOSFET
Rise Time:	19 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	11 ns
Width:	5.13 mm
Unit Weight:	0.017870 oz

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